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esmt/emp EMA2016 elite semiconductor memory technology inc. publication date: oct. 2009 / elite micropower inc. revision: 1.0 1/16 2.5w/ch stereo filter-less class-d audio amplifier features z supply voltage range: 2.8 v to 5.5 v z support single-ended or differential analog input z low static operation current z low shut-down current z short power-on transient time (1ms) z internal pull-low resistor on shut-down pins z independent shut-down control for left or right channel z short-circuit protection z over-temperature protection z loudspeaker power within 10% thd+n ? 1.5w/ch into 8 loudspeaker ? 2.5w/ch into 4 loudspeaker z loudspeaker efficiency ? 89% @ 8 , thd+n=10% ? 82% @ 4 , thd+n=10% applications z monitor audio z pda z portable multimedia devices z notebook computer z mobile phone description the EMA2016 is a stereo, filter-less class-d audio amplifier. operating with 5.0v loudspeaker driver supply, it can deliver 1.5w/ch output power into 8 loudspeaker and 2.5w/ch output power into 4 loudspeaker within 10% thd+n. the EMA2016 packaged as sop 16l is a stereo audio amplifier with high efficiency and proper thermal resistance, which leads to longer battery life and less heat sink requirement. it?s suitable for the notebook computer, and portable multimedia devices. EMA2016 with the independent shut-down control for left or right channel, that?s a better solution for low cost class-d system. ordering information product id package comments packing EMA2016-50sa16nrr sop 16l green tape & reel 2.5k units marking information line 1 logo line 2 product no line 3 tracking code
esmt/emp EMA2016 elite semiconductor memory technology inc. publication date: oct. 2009 / elite micropower inc. revision: 1.0 2/16 pin assignments pin description name typ description characteristic 1 pvddl p left channel power supply 2 outl+ o left channel output (+) 3 pgndl g left channel ground 4 outl- o left channel output (-) 5 outr+ o right channel output (+) 6 pgndr g right channel ground 7 outr- o right channel output (-) 8 pvddr p right channel power supply 9 nc nc 10 sdr# i shut-down right channel (low active) with 300 k pull-low resistor 11 inr+ i right channel input (+) 12 inr- i right channel input (-) 13 sdl# i shut-down left channel (low active) with 300 k pull-low resistor 14 inl+ i left channel input (+) 15 inl- i left channel input (-) 16 nc nc
esmt/emp EMA2016 elite semiconductor memory technology inc. publication date: oct. 2009 / elite micropower inc. revision: 1.0 3/16 functional block diagram pwm generator loudspeaker driver + - + - ~300k ~300k overload, voltage & thermal protection -wave generator ~300k pvddl ; pvddr inl+ inl- outl- outl+ sdr# r in r in c in c in differential input + - gain=300k /r in pgndl ; pgndr c s pwm generator loudspeaker driver + - + - ~300k ~300k inr+ inr- outr- outr+ r in r in c in c in differential input + - overload, voltage & thermal protection ~300k sdl# -wave generator available package package product no. ja ( o c/w) exposed thermal pad sop 16l EMA2016 57.3 no absolute maximum ratings symbol parameter min max unit pvdd supply for analog cells & loudspeaker 2.8 5.5 v input voltage -0.3 avdd v t stg storage temperature -65 150 o c t a ambient operating temperature 0 70 o c
esmt/emp EMA2016 elite semiconductor memory technology inc. publication date: oct. 2009 / elite micropower inc. revision: 1.0 4/16 recommended operating conditions general electrical characteristics symbol parameter typ unit pvdd supply for analog cells & loudspeaker driver 2.8~5.5 v at 5v 1.8 v ih high-level input voltage at 3.6v 1.4 v v il low-level input voltage 0.8 v t a ambient operating temperature 0~70 o c symbol parameter condition min typ max unit i sd supply current during shut-down mode pvdd=5.0v; sdl#=sdr#=0v 0.7 1 a pvdd=5.0v; sdl#=sdr#=5.0v; no load 10 i q quiescent current pvdd=3.6v; sdl#=sdr#=3.6v; no load 8.8 ma v offset output offset voltage input ac grounded, pvdd=5.0v 14 25 mv junction temperature for driver shutdown 145 150 155 o c temperature hysteresis for recovery from shutdown 115 120 125 o c f sw switching rate of loudspeakers driver 300 450 600 khz r sc loudspeaker short-circuit detect resistance pvdd=5.0v 2.2 2.8 pvdd=5.0v 400 r ds(on) static drain-source on-state resistance pvdd=3.6v 500 m
esmt/emp EMA2016 elite semiconductor memory technology inc. publication date: oct. 2009 / elite micropower inc. revision: 1.0 5/16 electrical characteristics and sp ecifications of loudspeaker driver z gain= 2 v/v, load=8 , f in =1 khz, t a =25 c (unless otherwise noted) symbol parameter condition min typ max unit thd+n = 10 % 1.6 w pvdd=5.0v thd+n = 1 % 1.3 w thd+n = 10 % 0.82 w p o rms output power per channel pvdd=3.6v thd+n = 1 % 0.66 w pvdd=5.0v, po=1.0w 0.2 % thd+n total harmonic distortion plus noise pvdd=3.6v, po=0.5w 0.23 % snr signal to noise ratio pvdd=5.0v, po=1.0w 93 db psrr power supply rejection ratio pvdd=3.6v, v ripple =200mvpp inputs ac grounded with ci=2 f f=217 hz -56 db cmrr common-mode rejection ratio pvdd=3.6v, v ic =0.1vpp, f=217hz -50 db v efficiency pvdd=5v, thd+n=10% 89 % z gain= 2 v/v, load=4 , f in =1 khz, t a =25 c (unless otherwise noted) symbol parameter condition min typ max unit thd+n = 10 % 2.6 w pvdd=5.0v thd+n = 1 % 2.05 w thd+n = 10 % 1.3 w p o rms output power per channel pvdd=3.6v thd+n = 1 % 1.05 w pvdd=5.0v, po=1.8w 0.18 % thd+n total harmonic distortion plus noise pvdd=3.6v, po=1.0w 0.22 % snr signal to noise ratio pvdd=5.0v, po=1.5w 91 db psrr power supply rejection ratio pvdd=3.6v, v ripple =200mvpp inputs ac grounded with ci=2 f f=217 hz -55 db cmrr common-mode rejection ratio pvdd=3.6v, v ic =0.1vpp, f=217hz -50 db v efficiency pvdd=5v, thd+n=10% 82 %
esmt/emp EMA2016 elite semiconductor memory technology inc. publication date: oct. 2009 / elite micropower inc. revision: 1.0 6/16 typical characteristics (gain=2 v/v, unless otherwise noted) z total harmonic distortion + noise (thd+n) vs. output power (8 ) z total harmonic distortion + noise (thd+n) vs. output power (4 ) z total harmonic distortion + noise (thd+n) vs. signal frequency (5.0v/8 )
esmt/emp EMA2016 elite semiconductor memory technology inc. publication date: oct. 2009 / elite micropower inc. revision: 1.0 7/16 z total harmonic distortion + noise (thd+n) vs. signal frequency (3.6v/8 ) z power supply rejection ratio vs. frequency (8 ) z power supply rejection ratio vs. frequency (4 )
esmt/emp EMA2016 elite semiconductor memory technology inc. publication date: oct. 2009 / elite micropower inc. revision: 1.0 8/16 z common mode rejection ratio vs. frequency (8 ) - 100 +0 -90 -80 -70 -60 -50 -40 -30 -20 -10 20 20k 50 100 200 500 1k 2k 5k 10k z common mode rejection ratio vs. frequency (4 ) - 100 +0 -90 -80 -70 -60 -50 -40 -30 -20 -10 20 20k 50 100 200 500 1k 2k 5k 10k t
esmt/emp EMA2016 elite semiconductor memory technology inc. publication date: oct. 2009 / elite micropower inc. revision: 1.0 9/16 z efficiency vs. output power (8 ) 0 10 20 30 40 50 60 70 80 90 100 0 0.2 0.4 0.6 0.8 1 1.2 output power (w) efficiency (%) 5v 3.6v z efficiency vs. output power (4 ) 0 10 20 30 40 50 60 70 80 90 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 output power (w) efficiency (%) 5v 3.6v
esmt/emp EMA2016 elite semiconductor memory technology inc. publication date: oct. 2009 / elite micropower inc. revision: 1.0 10/16 operation descriptions z self-protection circuits (typical values are used below.) EMA2016 has built-in over-temperatu re, overload and voltage detectors. (i) if the internal junction temperature is higher than 150 o c, the outputs of loudspeaker drivers will be disabled and at low state. t he temperature hysteresis for EMA2016 to return to normal operation is about 30 o c. the variation of pr otected temperature is around 10%. (ii) EMA2016 has built-in independent short-circuit protection fo r right and left channel. to protect loudspeaker driver s from over-current damage when the wires connected to loudspeakers are shorted to one another or shorted to gnd, circuits for the detection of output loading are built in the EMA2016. for normal operation, loudspeaker resistance is larger than 3.2 is required. otherwise, overload detectors may activate. once one of right and left channel overload detectors is active, loudspeaker drivers of right/left channel will be disabled and at low state. and, EMA2016 will be recovery from short-circuit fault by pulli ng sdr#/sdl# pin down to low and back to high after removing the s hort. EMA2016 will be burnt if the lines connected to loudspeakers are shorted to pvdd. (iii) once the pvdd voltage is lower t han 2.5v, EMA2016 will disable and loudspeaker drivers are disabled and at low state, c ease EMA2016 beside this circuit. when pvdd becomes larger than 2.6v, ema 2016 will return to normal operation. z anti-pop design EMA2016 is with anti-pop design. annoying pop sounds during initial power on and power down/up are suppressed. when one of the operations mentioned above is applied, EMA2016 will interna lly generate appropriate control signals to suppress pop sounds.
esmt/emp EMA2016 elite semiconductor memory technology inc. publication date: oct. 2009 / elite micropower inc. revision: 1.0 11/16 application information z input resistors (r in ) and input capacitors (c in ) the total gain of the audio amplifie r (EMA2016) is set by input resistor (r in ) according to the following equation (a). the performance at low frequency ( bass) is affected by the corner frequency (f c ) of the high-pass f ilter composed of input resistors (r in ) and input capacitors (c in ), determined in equation (b). () () a v v r k gain in l l l = 300 () () b hz c r f in in c l l l 2 1 = for differential audio signal applicat ion, the input capacitors (c in ), for dc decoupling, are not required. when singl e-ended audio source is used, the input capacitors (c in ) are required. z decoupling capacitor (cs) because of the power loss on the trace, which is between the device and decoupling capacitor, the decoupling capacitor should be placed as close as to the device pvdd and pgnd to reduce any parasitic resistor or inductor between them. and, a low esr ceramic capacitor, typically 1 f, is suggested for high frequen cy transients. for filtering audio band noise signal, a 10 f or greater capacitor (tantalum or electrolytic type) is suggested, but it is not requi red for most applications bec ause of the high psrr of this device.
esmt/emp EMA2016 elite semiconductor memory technology inc. publication date: oct. 2009 / elite micropower inc. revision: 1.0 12/16 application circuit example (filte r-less with fully di fferential input) z application circuit for fully differential input pwm generator loudspeaker driver + - + - ~300k ~300k overload, voltage & thermal protection -wave generator ~300k pvddl ; pvddr inl+ inl- outl- outl+ sdr# r in r in c in c in differential input + - gain=300k /r in pgndl ; pgndr c s pwm generator loudspeaker driver + - + - ~300k ~300k inr+ inr- outr- outr+ r in r in c in c in differential input + - overload, voltage & thermal protection ~300k sdl# -wave generator
esmt/emp EMA2016 elite semiconductor memory technology inc. publication date: oct. 2009 / elite micropower inc. revision: 1.0 13/16 application circuit example (fil ter-less with single-ended input) z application circuit for single-ended input pwm generator loudspeaker driver + - + - ~300k ~300k overload, voltage & thermal protection -wave generator ~300k pvddl ; pvddr inl+ inl- outl- outl+ sdr# r in r in c in c in single-ended input gain=300k /r in pgndl ; pgndr c s pwm generator loudspeaker driver + - + - ~300k ~300k inr+ inr- outr- outr+ r in r in c in c in overload, voltage & thermal protection ~300k sdl# single-ended input -wave generator
esmt/emp EMA2016 elite semiconductor memory technology inc. publication date: oct. 2009 / elite micropower inc. revision: 1.0 14/16 package dimensions z sop 16l dimension in millimeter dimension in inch symbols min nom max min nom max a 1.35 --- 1.75 0.0532 --- 0.0688 a1 0.10 --- 0.25 0.0040 --- 0.0098 b 0.33 --- 0.51 0.013 --- 0.020 c 0.19 --- 0.25 0.0075 --- 0.0098 e 1.27 bsc 0.050 bsc d 9.80 --- 10.00 0.3859 --- 0.3937 h 5.80 --- 6.20 0.2284 --- 0.2440 e 3.80 --- 4.00 0.1497 --- 0.1574 l 0.40 --- 1.27 0.016 --- 0.050 h 0.25 --- 0.50 0.0099 --- 0.0196 0 --- 8 0 --- 8
esmt/emp EMA2016 elite semiconductor memory technology inc. publication date: oct. 2009 / elite micropower inc. revision: 1.0 15/16 revision history revision date description 0.1 2009.03.30 original 1.0 2009.10.30 removed the letters of ?preliminary?
esmt/emp EMA2016 elite semiconductor memory technology inc. publication date: oct. 2009 / elite micropower inc. revision: 1.0 16/16 important notice all rights reserved. no part of this document may be rep roduced or duplicated in any form or by any means without the prior permission of esmt. the contents contained in this document are believed to be accurate at the time of publication. esmt assumes no responsibility for any error in this document, and reserves the right to change the produ cts or specification in this document without notice. the information contained h erein is presented only as a guide or examples for the application of our products. no res ponsibility is assumed by esmt for any infringement of patents, co pyrights, or other intellect ual property rights of third parties which may result from its use. no license, either express, implied or otherwise, is granted under any patent s, copyrights or other intellectual property rights of esmt or others. any semiconductor devices may have inher ently a certain rate of failure. to minimize risks associated with cust omer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the customer w hen making application designs. esmt's products are not authorized for use in critical applications such as, but not limited to, life support device s or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. if products described here are to be used for such kinds of application, purchaser must do its ow n quality assurance testing appropriate to such applications.

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